(often referred to as the ) is a high-performance 30V N-channel enhancement-mode MOSFET
): Extremely low resistance, typically in the single-digit milliohms ( ) range, ensuring minimal power loss and heating. Gate Charge ( Qgcap Q sub g m3966m mosfet verified
Based on aggregated datasheet data from reliable distributors (MCC, ON Semi, Infineon common equivalents), a genuine M3966M should exhibit the following typical parameters: (often referred to as the ) is a
RDS(on)cap R sub cap D cap S open paren o n close paren end-sub It is commonly manufactured in two compact, surface-mount
Used in power distribution switches for peripheral devices.
Understanding the structural boundaries of the M3966M is vital before initiating a component replacement. It is commonly manufactured in two compact, surface-mount package variants optimized for heat dissipation: : Housed in a DFN5x6 (PRPAK) package. QM3966M3 : Housed in a DFN3x3 package. Key Electrical Parameters Type: N-Channel Enhancement Mode Trench MOSFET Drain-Source Voltage ( VDScap V sub cap D cap S end-sub ): 30V Continuous Drain Current ( IDcap I sub cap D ): ~56A (Package dependent) Power Dissipation ( PDcap P sub cap D ): 2W Maximum Junction Temperature ( TJcap T sub cap J ): 105°C Footprint: QFN-8 / DFN configurations Why a "Verified" M3966M MOSFET Matters